ksa1015 ? pnp epitaxial silicon transistor ? 2002 fairchild semiconductor corporation www.fairchildsemi.com ksa1015 rev. 1.1.2 1 january 2014 ksa1015 pnp epitaxial silicon transistor features ? low-frequency amplifier ? collector-base voltage: v cbo = -50 v ? complement to ksc1815 ordering information absolute maximum ratings stresses exceeding the absolute maximum ratings may damage the device. the device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. in addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. the absolute maximum ratings are stress ratings only. values are at t a = 25c unless otherwise noted. part number marking package packing method ksa1015grta a1015 to-92 3l ammo ksa1015yta a1015 to-92 3l ammo symbol parameter value unit v cbo collector-base voltage -50 v v ceo collector-emitter voltage -50 v v ebo emitter-base voltage -5 v i c collector current -150 ma i b base current -50 ma t j junction temperature 150 c t stg storage temperature range -55 to 150 c 1. emitter 2. collector 3. base to-92 1
ksa1015 ? pnp epitaxial silicon transistor ? 2002 fairchild semiconductor corporation www.fairchildsemi.com ksa1015 rev. 1.1.2 2 thermal characteristics (1) values are at t a = 25c unless otherwise noted. note: 1. pcb size: fr-4 76 x 114 x 1.57 mm 3 (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size. electrical characteristics values are at t a = 25c unless otherwise noted. h fe classification symbol parameter max. unit p d total device dissipation 400 mw derate above 25 c3.2mw/ c r ja thermal resistance, junction to ambient 312 c/w symbol parameter conditions min. typ. max. unit bv cbo collector-base breakdown voltage i c = -100 a, i e = 0 -50 v bv ceo collector-emitter breakdown voltage i c = -10 ma, i b = 0 -50 v bv ebo emitter-base breakdown voltage i e = -10 a, i c = 0 -5 v i cbo collector cut-off current v cb = -50 v, i e = 0 -0.1 a i ebo emitter cut-off current v eb = -5 v, i c = 0 -0.1 a h fe 1 dc current gain v ce = -6 v, i c = -2 ma 70 400 h fe 2 dc current gain v ce = -6 v, i c = -150 ma 25 v ce (sat) collector-emitter saturation voltage i c = -100 ma, i b = -10 ma -0.1 -0.3 v v be (sat) base-emitter saturation voltage i c = -100 ma, i b = -10 ma -1.1 v f t current gain bandwidth product v ce = -10 v, i c = -1 ma 80 mhz c ob output capacitance v cb = -10 v, i e = 0, f = 1 mhz 47pf nf noise figure v ce = -6 v, i c = -0.1 ma, f = 100 hz, r g = 10 k 0.5 6 db classification o y gr h fe 1 70 ~ 140 120 ~ 240 200 ~ 400
ksa1015 ? pnp epitaxial silicon transistor ? 2002 fairchild semiconductor corporation www.fairchildsemi.com ksa1015 rev. 1.1.2 3 typical performance characteristics figure 1. static characteristic figure 2. dc current gain figure 3. base-emitter saturation voltage and collector-emitter saturation voltage figure 4. base-emitter on voltage figure 5. collector output capacitance figure 6. current gain bandwidth product 0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 i b = -400 a i b = -350 a i b = -300 a i b = -200 a i b = -150 a i b = -100 a i b = -250 a i b = -50 a i c [ma], collector current v ce [v], collector-emitter voltage -0.1 -1 -10 -100 1 10 100 1000 v ce = -6v h fe , dc current gain i c [ma], collector current -0.1 -1 -10 -100 -0.01 -0.1 -1 -10 v ce (sat) i c =10i b v be (sat) v be (sat)[v], v ce (sat)[v], saturation voltage i c [ma], collector current -0.0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -0.1 -1 -10 -100 v ce =-6v i c [ma], collector current v be (sat)[v], base-emitter voltage -1 -10 -100 1 10 f=1mhz i e =0 c ob [pf], capacitance v cb [v], collector-base voltage -1 -10 10 100 1000 v ce =-6v h fe , dc current gain i c [ma], collector current
ksa1015 ? pnp epitaxial silicon transistor ? 2002 fairchild semiconductor corporation www.fairchildsemi.com ksa1015 rev. 1.1.2 4 physical dimensions figure 7. 3-lead, to-92, molded 0.200 in line spacing ld form (j61z option) (active) package drawings are provided as a service to customers considering fairchild components. drawings may change in any manner without notice. please note the revision and/or date on the drawing and contact a fairchild semiconductor representative to ver ify or obtain the most recent revision. package specifications do not expand the terms of fairchild?s worldwide terms and conditions, specifically the warranty therein, which covers fairchild products. always visit fairchild semiconductor?s online packaging area for the most recent package drawings: http://www.fairchildsemi.com/dwg/za/za03f.pdf . for current tape and reel specifications, visit fairchild semiconductor?s online packaging area: http://www.fairchildsemi.com/packing_dwg/pkg-za03f_bk.pdf . to-92 3l (ammo)
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